| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a pattern of contact holes to be connected to a fine pattern, which can increase the reliability of a device. SOLUTION: The pattern forming method includes steps of forming a block film 21 on a region of an insulating layer 20 having a region for a first contact hole 11 to be formed therein but not having a region for a second contact hole 13 not to be formed therein, forming a resist film 30 having openings for formation of the first and second contact holes 11, 13 on the block film 21 and the insulating film 20, and forming the first contact hole 11 in the block film 21 and the insulating layer 20 and also the second contact hole 13 in the insulating layer 20 by etching the resultant structure with use of the resist film 30 as a mask respectively in such a manner that, with respect to the depth of the insulating layer 20 from its top surface, the first contact hole 11 is shallower than the second contact hole 13 and that the first contact hole 11 is not contacted with a semiconductor substrate 1. COPYRIGHT: (C)2008,JPO&INPIT
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