| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus for MBE film formation of metal nitrogen compound by which accurate control of the growth quantity of film is made possible to improve the flatness and crystallinity of a generated film and film formation speed simultaneously and efficiently. SOLUTION: An RF power input quantity of a nitrogen excitation cell 21 to an excitation coil 24 is changed in synchronous with the periodical opening/closing operation of a shutter 12 that is arranged at the outlet of a solid metal molecular beam cell 11, and the nitrogen excitation cell 21 is changed over in between LB mode and HB mode. At the same time when a specified quantity of metal molecular beam is given from the solid metal molecular beam cell 11 to a substrate 5 within a growth chamber, a nitrogen excitation molecular beam that is not reacted with the metal molecule is given from the nitrogen excitation cell 21. Furthermore, during a specified period overlapping the irradiation period of the metal molecular beam to the substrate 5 or after the stoppage of irradiation of the metal molecular beam, a specified quantity of nitrogen active species is given to the substrate 5 from the nitrogen excitation cell 21 in HB mode switched from LB mode, permitting accurate control of growth quantity. COPYRIGHT: (C)2008,JPO&INPIT
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