| 摘要 |
PROBLEM TO BE SOLVED: To suppress the reduction of a luminous efficiency or the increase of an operational voltage by suppressing carrier overflow, reducing the operational voltage and a threshold current or suppressing the introduction of a defect or a strain in a crystal interface in an active layer of a multiple quantum well structure in a manufacturing process in a semiconductor laser device having the active layer of the multiple quantum well structure. SOLUTION: In a nitride semiconductor laser device, at least a first cladding layer of a first conduction type, an active layer, an overflow preventing layer of a second conduction type, and a second cladding layer of the second conduction type are formed on a crystal substrate; the active layer is made of a double quantum well layer having 2 wells, each having a width of 2 to 5 nm. The double quantum well layer includes a barrier layer of 3 layers having a well layer therebetween, the barrier layer being positioned outside the double quantum well layer. COPYRIGHT: (C)2008,JPO&INPIT
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