发明名称 Dual Voltage Flash Memory Methods
摘要 A voltage regulation circuit in a nonvolatile memory card accepts an input voltage from a host at two or more different voltage levels and provides an output voltage at a single level to components including a memory die. The voltage regulation circuit can provide an output voltage that is higher or lower than the input voltage.
申请公布号 US2008080254(A1) 申请公布日期 2008.04.03
申请号 US20060537214 申请日期 2006.09.29
申请人 KAGAN YISHAI;MCCARTHY MICHAEL JAMES 发明人 KAGAN YISHAI;MCCARTHY MICHAEL JAMES
分类号 G11C11/34;G11C5/14;G11C7/10;G11C16/06 主分类号 G11C11/34
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