| 摘要 |
Film formation conditions are determined in accordance with relationships among a film formation temperature Ts (° C.), a plasma potential Vs (V) in the plasma at the time of the film formation, and characteristics of the formed film. For a piezoelectric film containing at least one kind of Pb-containing perovskite type oxide, the film formation conditions should preferably be determined within a range such that Formulas (1) and (2) shown below are satisfied, or within a range such that Formulas (3) and (4) shown below are satisfied: <?in-line-formulae description="In-line Formulae" end="lead"?>400<=Ts(° C.)<=475 (1)<?in-line-formulae description="In-line Formulae" end="tail"?> <?in-line-formulae description="In-line Formulae" end="lead"?>20<=Vs(V)<=50 (2)<?in-line-formulae description="In-line Formulae" end="tail"?> <?in-line-formulae description="In-line Formulae" end="lead"?>475<=Ts(° C.)<=600 (3)<?in-line-formulae description="In-line Formulae" end="tail"?> <?in-line-formulae description="In-line Formulae" end="lead"?>Vs(V)<=40 (4)<?in-line-formulae description="In-line Formulae" end="tail"?>
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