发明名称 Plasma discharge film-forming apparatus and method
摘要 <p>A film forming system includes a vacuum chamber (210,310) having a gas inlet (214) for a film-forming gas (G) and a gas outlet (15). A target holder (12) is disposed in the vacuum chamber (210,310) to hold a target (T), a substrate holder (11) is opposed to the target holder (12) and holds a film-forming substrate (B) on which film is formed and a plasma forming portion (12,13) generates plasma between the target holder (12) and the film-forming substrate (B) . The film-forming system is characterized by having a shield (250) which surrounds the outer peripheral surface of the target holder (12) facing the substrate (B). The shield comprises a plurality of shield layers (250a).</p>
申请公布号 EP1906433(A1) 申请公布日期 2008.04.02
申请号 EP20070019053 申请日期 2007.09.27
申请人 FUJIFILM CORPORATION 发明人 FUJII, TAKAMICHI
分类号 H01J37/32;B41J2/14;B41J2/16;C23C14/00;C23C14/08;C23C14/34;H01J37/34;H01L21/316;H01L41/09;H01L41/18;H01L41/187;H01L41/316;H01L41/39 主分类号 H01J37/32
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