Semiconductor device

摘要

There is a problem that a reverse off-leak current becomes too large in a Schottky barrier diode. A semiconductor device of the present invention includes P-type first and second anode diffusion layers 5, 6 formed in an N-type epitaxial layer 3, N-type cathode diffusion layers 4 formed in the epitaxial layer 3, a P-type third anode diffusion layer 7, 8 formed in the epitaxial layer 3 so as to surround the first and second anode diffusion layers 5, 6 and to extend toward the cathode diffusion layers 4, and a Schottky barrier metal layer 14 formed on the first and second anode diffusion layers 5, 6.