| 发明名称 |
Porous source/drain electrodes for OFETs |
| 摘要 |
The organic material of the channel layer may be absorbed into the porous source/drain electrodes of the OFET device during device fabrication which allows the channel layer to be deposited easily only in the region between the source and drain electrodes. OFET devices with reduced off current can be formed. |
| 申请公布号 |
GB2442311(A) |
申请公布日期 |
2008.04.02 |
| 申请号 |
GB20070017873 |
申请日期 |
2007.09.13 |
| 申请人 |
DAI NIPPON PRINTING CO LTD |
发明人 |
HIROYUKI HONDA;HIRONORI KOBAYASHI;MASANAO MATSUOKA;MITSUTAKA NAGAE |
| 分类号 |
H01L51/00 |
主分类号 |
H01L51/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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