发明名称
摘要 In a conventional semiconductor integrated circuit device, a means for preventing a backflow current has a high on-state resistance, which makes it impossible to reduce the voltage loss in normal operation. A semiconductor integrated circuit device of the invention has a first MOS transistor, a second MOS transistor provided between the first MOS transistor and a power supply terminal, and a means that, in normal operation, keeps the gate of the second MOS transistor at a predetermined potential (preferably the ground potential) and that, when a backflow current is likely, turns the second MOS transistor off. This helps prevent a backflow current while reducing the voltage loss in normal operation.
申请公布号 JP4070654(B2) 申请公布日期 2008.04.02
申请号 JP20030101366 申请日期 2003.04.04
申请人 发明人
分类号 H03K17/06;G05F1/56;H03K17/0814;H03K17/14;H03K17/687 主分类号 H03K17/06
代理机构 代理人
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