| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin-film transistor matrix device which can form auxiliary capacitances of a large capacitance value and will not cause fabrication yield to be reduced. <P>SOLUTION: A plurality of parallel gate bus lines 16n, 16n+1, 16n+2..., and a plurality of parallel drain bus lines 18m, 18m+1... are provided in parallel. Thin film transistors 14 are disposed near the lower end of sub-patterns 30n, 30n+1, 30n+2... The source electrodes 36 of the thin-film transistors 14 are connected to picture element electrodes 12 via contact holes 38. The picture element electrodes 12 are formed at positions which are beyond a next gate bus line 16n, 16n+1, 16n+2... Intermediate electrodes 40 for forming sub-capacitances Cs are formed on the lower ends of the pixel electrodes 12. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
