A light emitting device includes a stack of semiconductor layers defining a light emitting pn junction and a dielectric layer disposed over the stack of semiconductor layers. The dielectric layer has a refractive index substantially matching a refractive index of the stack of semiconductor layers. The dielectric layer has a principal surface distal from the stack of semiconductor layers. The distal principal surface includes patterning, roughening, or texturing configured to promote extraction of light generated in the stack of semiconductor layers.
申请公布号
EP1905104(A1)
申请公布日期
2008.04.02
申请号
EP20060787150
申请日期
2006.07.11
申请人
GELCORE LLC;GAO, XIANG;VENUGOPALAN, HARI S.;ELIASHEVICH, IVAN
发明人
GAO, XIANG;VENUGOPALAN, HARI S.;ELIASHEVICH, IVAN;SACKRISON, MICHAEL