| 摘要 |
In a photodetector where a circuit section, in which an interconnection is formed, is formed adjacent to a light receiving section, photo sensitivity within a light receiving surface is prevented from being non-uniform due to an interlayer insulating film at a periphery of the light receiving section being increased in thickness. In a circuit region, a buffer region is disposed adjacent to a light receiving section. In the buffer region, in order to reduce irregularity of an interlayer insulating film, a density of planarizing pads disposed between the interconnections is gradually reduced from a standard value in a region as it approaches the light receiving section. |
