发明名称 |
Manufacturing method of semiconductor device |
摘要 |
<p>The present invention relates to a manufacturing method of a semiconductor device having a size approximately same as the size of a semiconductor chip when viewed in a plan view, in which the semiconductor chip is flip-chip bonded to a wiring pattern, and an object of the invention is to provide the manufacturing method of a semiconductor device which allows reduction in the number of process steps to realize the minimization of manufacturing cost. An insulating resin 13 is formed so as to cover a plurality of internal connection terminals 12 and a surface of a plurality of semiconductor chips 11 on which the plurality of internal connection terminals are provided, then a metal layer 33 for forming a wiring pattern is formed over the insulating resin 13, and by pressing the metal layer 33, the metal layer 33 and the plurality of internal connection terminals 12 are pressure-bonded.</p> |
申请公布号 |
EP1906445(A2) |
申请公布日期 |
2008.04.02 |
申请号 |
EP20070018290 |
申请日期 |
2007.09.18 |
申请人 |
SHINKO ELECTRIC INDUSTRIES CO., LTD. |
发明人 |
YAMANO, TAKAHARU;ARAI, TADASHI |
分类号 |
H01L23/31;H01L23/525 |
主分类号 |
H01L23/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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