Back contacted solar cell

摘要

This invention relates to a cost effective method of producing a back-contacted silicon solar cell. A silicon substrate 10 is doped on the back side with alternating P-type and N-type conductivity in an interdigitated pattern 3, and optionally a layer of either P- or N-type on the front side of the wafer 2. One or more surface passivation layers 4, 6, 7 are formed on each side of the substrate and openings 8 are created in at least the outer surface passivation layer on the back side of the substrate. A metallic layer 9 is deposited covering the entire back side, which fills the openings in the surface passivation layers. Openings 11 are created in the deposited metallic layer such that electrically insulated contacts with the doped regions on the back side of the substrate can be obtained.