METHOD FOR FABRICATING NON-VOLATILE MEMORY DEVICE

摘要

A method for manufacturing a non-volatile memory device is provided to prevent oxidization of a charge trapping layer by forming a first charge blocking layer using a first oxidizing gas and forming a second charge blocking layer using a second oxidizing gas stronger than the first oxidizing gas. A charge tunneling layer(110) is formed on a semiconductor substrate(100), and then a charge trapping layer(120) is formed on the charge tunneling layer. A first charge blocking layer(130) is formed on the charge trapping layer by repeatedly performing a metal gas supplying step, a metal source purging step, a first oxidizing gas supplying step and a first oxidizing gas purging step. A second charge blocking layer(140) is formed on the first charge blocking layer by repeatedly performing a metal gas supplying step, a metal source purging step, a second oxidizing gas supplying step and a second oxidizing gas purging step. A gate electrode layer is formed on the second charge blocking layer.