Piezoelectric film, process of manufacturing the same and piezoelectric element

摘要

A piezoelectric film forming method includes the step of forming on a substrate (20) a piezoelectric film (40) formed by the elements of a target by opposing a target having a composition according to the composition of film (40) to be formed, and releasing the elements from the target by a vapor phase growth method using plasma. The following formulae (1) and (2) or (3) and (4) are satisfied. 400 ‰ Ts °C ‰ 500 30 ‰ D mm ‰ 80 400 ‰ Ts °C ‰ 600 30 ‰ D mm ‰ 80
wherein Ts (°C) and D(mm) respectively represent the film-forming temperature and the distance between the substrate (20) and the target.