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发明名称
半导体装置及其制造方法
摘要
本发明提供一种半导体装置及其制造方法。上述半导体装置包括:一半导体基板;一第一介电层具有沿第一方向的一第一导线设置于该半导体基板上,其中该第一导线的顶表面比该第一介电层的顶表面低;一第二介电层包括一对应一第一二极体构件的开口于该第一介电层上;以及一半导体二极体元件包括:该第一二极体构件设置于该第一导线上,其中该第一二极体构件的顶表面与该第一介电层的顶表面齐高;以及一第二二极体构件与一第三二极体构件填入该开口中。
申请公布号
TW200816375
申请公布日期
2008.04.01
申请号
TW096110962
申请日期
2007.03.29
申请人
台湾积体电路制造股份有限公司
发明人
汪坤发;王琳松
分类号
H01L21/768(2006.01);H01L21/329(2006.01)
主分类号
H01L21/768(2006.01)
代理机构
代理人
洪澄文;颜锦顺
主权项
地址
新竹市新竹科学工业园区力行六路8号
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