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发明名称
晶粒上热感测器
摘要
一种用于半导体记忆体装置中的晶粒上热感测器(ODTS)包含:一温度资讯码产生单元,用于响应第一与第二致能信号来感测该半导体记忆体装置的内部温度并且用于产生一含有该经感测之温度资讯的温度资讯码;以及一旗标信号逻辑判断单元,用于产生具有温度资讯的复数个第一旗标信号并且用于响应该等第一与第二致能信号来判断该复数个第一旗标信号究竟系具有一预设的逻辑位准或是一变动的逻辑位准。
申请公布号
TW200816218
申请公布日期
2008.04.01
申请号
TW096100496
申请日期
2007.01.05
申请人
海力士半导体股份有限公司
发明人
郑椿锡;朴起德
分类号
G11C7/04(2006.01)
主分类号
G11C7/04(2006.01)
代理机构
代理人
陈长文
主权项
地址
韩国
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