发明名称 Composite integrated semiconductor device
摘要 A composite integrated semiconductor device. In one embodiment, an input surge/noise absorbing circuit absorbs surge from an input signal, an attenuating/level-shifting circuit attenuates or level-shifts the input signal, and an electrical signal converting circuit converts the input signal to an output signal. The input surge/noise absorbing circuit, the attenuating or level-shifting circuit, and the electrical signal converting circuit together form a unit, and a plurality of these units are arranged in parallel in one semiconductor substrate to form the composite integrated semiconductor device, resulting in a reduction in the number of discrete components mounted on a printed circuit board.
申请公布号 US7352548(B2) 申请公布日期 2008.04.01
申请号 US20070723356 申请日期 2007.03.19
申请人 FUJI ELECTRIC CO., LTD. 发明人 KIUCHI SHIN;YOSHIDA KAZUHIKO;ICHIMURA TAKESHI;YAEZAWA NAOKI;FURUHATA SHOICHI
分类号 H02H9/00;H01L23/552;H01L27/02;H03F1/26;H03F1/52 主分类号 H02H9/00
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