| 摘要 |
A non-volatile memory device comprises a memory cell array having a plurality of non-volatile memory cells arranged in rows and columns. Selected memory cells are programmed by applying program voltages thereto. Next, data bits stored in the selected cells are read. Then, a first column scan operation is performed to determine whether any of the selected memory cells is inadequately programmed. Upon determining that at least one of the selected memory cells is inadequately programmed, a second column scan operation is performed to detect a total number of the selected memory cells that are inadequately programmed. Upon determining that the total number of the selected memory cells that are inadequately programmed is less than a number that can be corrected by an error correcting circuit, the program operation terminates with a program pass status.
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