发明名称 Power semiconductor module having a half-bridge configuration
摘要 A power semiconductor module having a carrier plate, on which at least four substrates are arranged, and having a first and a second busbar having two conductive plates is disclosed. The conductive plates are arranged such that they are at a distance from one another and are insulated from one another, for respectively carrying a lower and an upper electrical potential, said busbars each being fitted with outer connecting lugs which lead away from the substrates and inner connecting lugs on the substrate side. Symmetrization of the current during dynamic commutation operations is achieved by correctly selecting the order of the outer connecting lugs of the respective first busbar for a lower potential and of the second busbar for an upper potential in accordance with the order of the inner connecting points of the parallel-connected half-bridge circuits and also of the inner connecting lugs of the first busbar and of the second busbar.
申请公布号 US7352587(B2) 申请公布日期 2008.04.01
申请号 US20060555764 申请日期 2006.11.02
申请人 INFINEON TECHNOLOGIES AG 发明人 SCHILLING OLIVER;WOELZ MARTIN
分类号 H05K7/02 主分类号 H05K7/02
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