METHOD OF MANUFACTURING FLASH MEMORY DEVICE HAVING BLOCKING OXIDE FILM

摘要

A flash memory device having a blocking oxide layer and a method for manufacturing the same are provided to improve an interface characteristic and to suppress generation of leakage current by forming a first and second blocking oxide layers. A tunneling oxide layer(110) is formed on a semiconductor substrate(100). An electric charge storage layer(120) is formed on the tunneling oxide layer. A first blocking oxide layer(132) is formed on the electric charge storage layer under a first temperature condition. A second blocking oxide layer(134) is formed on the first blocking oxide layer under a second temperature condition higher than the first temperature condition. A gate electrode(140) is formed on the second blocking oxide layer. The first temperature is selected within a range of room temperature to 600 °C.