发明名称 MULTI LAYER DIELECTRICE LAYER AND METHOD FOR FABRICATING CAPACITOR WITH THE SAME
摘要 A multi-layered dielectric layer and a method for manufacturing a capacitor using the same are provided to reduce a leakage current and enhance a dielectric constant by thickening a third dielectric layer relative to first and second dielectric layers. A second dielectric layer(102) is formed on a first dielectric layer(101), and has a dielectric constant lower than that of the first dielectric layer. A third dielectric layer(103) is formed on the second dielectric layer, and has a dielectric constant higher than that of the second dielectric layer. The third dielectric layer has a thickness thicker than those of the first and second dielectric layers, the first dielectric layer has a thickness thinner than that of the third dielectric layer, and the second dielectric layer has a thickness thinner than that of the first dielectric layer.
申请公布号 KR100818657(B1) 申请公布日期 2008.04.01
申请号 KR20060134352 申请日期 2006.12.27
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK, JONG BUM
分类号 H01L27/108 主分类号 H01L27/108
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