发明名称 Semiconductor substrate, semiconductor device, method for manufacturing semiconductor substrate and method for manufacturing semiconductor device
摘要 A semiconductor substrate comprising: a semiconductor base; dielectric layers of mutually different film thicknesses formed on the semiconductor base; and semiconductor layers of mutually different film thicknesses formed on the dielectric layers.
申请公布号 US7351616(B2) 申请公布日期 2008.04.01
申请号 US20050193202 申请日期 2005.07.28
申请人 SEIKO EPSON CORPORATION 发明人 KATO JURI
分类号 H01L21/84 主分类号 H01L21/84
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