METHOD OF FORMING A PHASE-CHANGE MEMORY UNIT AND METHOD OF MANUFACTURING A PHASE-CHANGE MEMORY DEVICE INCLUDING THE PHASE-CHANGE MATERIAL LAYER

摘要

A method for forming a phase change memory unit and a method for manufacturing a phase change memory device including a phase-change material layer are provided to reduce a set resistance and operational current and to enhance durability and a sensing margin. A contact region(105) is formed on a substrate(100). A lower electrode(140) is electrically connected to the contact region. A preliminary phase change material layer is formed on the lower electrode by using a carbon-doped chalcogenide compound or a carbon or nitrogen-doped chalcogenide compound on a lower electrode. A phase change material layer is formed by doping a stabilization metal onto the preliminary phase change material layer. An upper electrode(175) is formed on the phase change material layer. An insulating structure having at least one pad connected to the contact region is formed on the substrate before the lower electrode is formed.