发明名称 |
SEMICONDUCTOR MEMORY DEVICE WITH ON-DIE-TERMINATION CIRCUIT |
摘要 |
A semiconductor memory device with an on-die-termination circuit is provided to turn off the on-die-termination circuit through assembly of an applied internal signal without using on-die termination. A driving signal generation unit(100) generates an initialization signal and a positive/negative driving clock by receiving a plurality of control signals. An off-signal generation unit(200) is initialized in response to the initialization signal, and generates a termination off-signal in response to the positive/negative driving clock. A termination resistance supply unit(400) supplies termination resistance according to the setting of a mode register and the termination off-signal. The plurality of control signals is applied through an input pin which is not connected to the termination resistor.
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申请公布号 |
KR20080028590(A) |
申请公布日期 |
2008.04.01 |
申请号 |
KR20060094050 |
申请日期 |
2006.09.27 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM, KWAN WEON;LEE, JEONG WOO |
分类号 |
G11C7/10 |
主分类号 |
G11C7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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