发明名称 SEMICONDUCTOR MEMORY DEVICE WITH ON-DIE-TERMINATION CIRCUIT
摘要 A semiconductor memory device with an on-die-termination circuit is provided to turn off the on-die-termination circuit through assembly of an applied internal signal without using on-die termination. A driving signal generation unit(100) generates an initialization signal and a positive/negative driving clock by receiving a plurality of control signals. An off-signal generation unit(200) is initialized in response to the initialization signal, and generates a termination off-signal in response to the positive/negative driving clock. A termination resistance supply unit(400) supplies termination resistance according to the setting of a mode register and the termination off-signal. The plurality of control signals is applied through an input pin which is not connected to the termination resistor.
申请公布号 KR20080028590(A) 申请公布日期 2008.04.01
申请号 KR20060094050 申请日期 2006.09.27
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, KWAN WEON;LEE, JEONG WOO
分类号 G11C7/10 主分类号 G11C7/10
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