| 摘要 |
Within a lithography process having a critical dimension, a method, system and structure for determining a focus deviation value relative to an ideal focus position said is disclosed. By projecting a series of lines or spots characterized by the constant pitch size which is greater than the projection devise optical resolution and incrementally increasing widths onto the surface of the photoactive material, wherein the width of at least one of the lines or sports is substantially the same as the critical dimension, and the widths of the other lines or spots are substantially equally distributed around the critical dimension, approximate focus and exposure dose deviation values may be determined.
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