发明名称 INDUCTIVELY COUPLED PLASMA REACTOR FOR WIDE AREA PLASMA PROCESSING
摘要 An inductively coupled plasma reactor for processing large area plasma is provided to generate uniform large-area plasma having high density by improving a structure of a wireless frequency antenna and a gas supplying structure. An inductively coupled plasma reactor for processing large area plasma includes a vacuum chamber(10) having a substrate support where a substrate to be processed is positioned. A dielectric window(34) is installed at an upper portion of the vacuum chamber. A wireless frequency antenna(30) is arranged in a region of the dielectric window. A gas shower head is installed at the center of the dielectric window to inject a first process gas applied from a gas source(20) to the vacuum chamber. A first power supply unit applies a power having a first frequency to the wireless frequency antenna. A second power source applies a power having a second frequency to the gas shower head.
申请公布号 KR20080028848(A) 申请公布日期 2008.04.01
申请号 KR20080021735 申请日期 2008.03.08
申请人 CHOI, DAI KYU 发明人 CHOI, DAI KYU
分类号 H05H1/34;H01L21/3065 主分类号 H05H1/34
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