| 摘要 |
A method for forming an isolation film in a semiconductor device is provided to prevent formation of defects such as a pin hole by adding a second liner nitride layer in a process of forming an HDP oxide layer. Trenches(208) are formed in a semiconductor substrate(200), and then a first liner nitride layer(212) is formed on the substrate exposed by the trenches. A first HDP(High Density Plasma) oxide layer is formed to bury a portion of the trenches and expose the first liner nitride layer at a side of the trench. A second liner nitride(218) is formed on the first HDP oxide layer and the exposed first liner nitride layer, and then is removed from the surface of the first HDP oxide layer. The second HDP oxide layer is planarized to form a trench isolation film.
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