发明名称 |
Nitride semiconductor vertical cavity surface emitting laser |
摘要 |
In one aspect, a VCSEL includes a base region that has a vertical growth part laterally adjacent a first optical reflector and a lateral growth part that includes nitride semiconductor material vertically over at least a portion of the first optical reflector. An active region has at least one nitride semiconductor quantum well vertically over at least a portion of the lateral growth part of the base region and includes a first dopant of a first electrical conductivity type. A contact region includes a nitride semiconductor material laterally adjacent the active region and a second dopant of a second electrical conductivity type opposite the first electrical conductivity type. A second optical reflector is vertically over the active region and forms with the first optical reflector a vertical optical cavity overlapping at least a portion of the at least one quantum well of the active region. A method of fabricating a VCSEL also is described.
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申请公布号 |
US7352788(B2) |
申请公布日期 |
2008.04.01 |
申请号 |
US20050203699 |
申请日期 |
2005.08.15 |
申请人 |
AVAGO TECHNOLOGIES ECBU IP (SINGAPORE) PTE, LTD. |
发明人 |
CORZINE SCOTT W.;BOUR DAVID P. |
分类号 |
H01S5/00 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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