| 摘要 |
There is provided a semiconductor storage device capable of high integration. On a top surface of a semiconductor substrate, a plurality of device isolation regions ( 16 ) each extending and meandering in a lateral direction are formed so as to be arrayed with respect to a longitudinal direction, by which active regions are defined between neighboring ones of the device isolation regions ( 16 ), respectively. Dopant diffusion regions (source or drain) are formed at individual turnover portions (corresponding to contacts ( 14 ), ( 15 )), respectively, of the meanders within the active regions. A plurality of word lines ( 11 ) extending straight in the longitudinal direction run on the channel regions within the active regions via a film having memory function, respectively. A first bit line ( 12 ) extending straight in the lateral direction runs on the dopant diffusion region (corresponding to contact ( 14 )) provided at a crest-side turnover portion. A second bit line ( 15 ) extending straight in the lateral direction runs on the dopant diffusion region (corresponding to contact ( 15 )) provided at a trough-side turnover portion.
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