METHOD FOR ADJUSTING A DEVELOP INSPECTION CD AND A FINAL INSPECTION CD IN A PROCESS FOR MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

A method for adjusting a DI(develop inspection) CD(critical dimension) and an FI(final inspection) CD in a semiconductor device fabricating process is provided to correct the trend of the FI CD by adjusting the focus of exposure equipment. A wafer is loaded into exposure equipment(S10). The exposure energy of the exposure equipment is adjusted to make the wafer have a desired CD(S20). An exposure process is performed on the wafer(S30). The exposure energy of the exposure equipment is varied in a manner that the DI CD of the wafer is measured and the measured DI CD has a predetermined CD(S40). The wafer is loaded into etching equipment(S50). An etch process is performed on the wafer(S60). The FI CD of the wafer is measured(S70). The focus of the exposure equipment is adjusted so that the FI CD of the wafer has a predetermined CD(S80). The focus of the exposure equipment can be adjusted only in a predetermined range by an interlock.