发明名称 |
Semiconductor transistors having reduced channel widths and methods of fabricating same |
摘要 |
A method of forming a channel in a semiconductor device including forming an opening in a masking layer to expose a portion of an underlying semiconductor layer through the opening is provided. The method further includes disposing a screening layer and implanting a first type of ions in the portion of the underlying semiconductor layer through the screening layer and through the opening in the masking layer. A second type of ions are implanted in the portion of the underlying semiconductor layer through the screening layer and through the opening in the masking layer at an oblique ion implantation angle wherein a lateral spread of second type ions is greater than a lateral spread of first type ions. Semiconductor devices fabricated in accordance to above said method is also provided.
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申请公布号 |
US7351637(B2) |
申请公布日期 |
2008.04.01 |
申请号 |
US20060400842 |
申请日期 |
2006.04.10 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
TUCKER JESSE BERKLEY |
分类号 |
H01L21/336;H01L21/425;H01L21/8222 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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