METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for forming a semiconductor device is provided to shorten an interval of process time and reduce a fabricating cost by forming an oxide layer by a bake process of an inline apparatus. A metal layer is formed on a semiconductor substrate(100). An arc layer is formed on the metal layer(110). The semiconductor substrate having the arc layer is introduced into an inline apparatus to perform a bake process so that an oxide layer can be formed(120). The thickness of the oxide layer can be determined according to a difference of the time and temperature of the bake process.