发明名称 |
Methods of forming semiconductor device |
摘要 |
A method of forming a semiconductor device includes forming a three-dimensional structure formed of a semiconductor on a semiconductor substrate, and isotropically doping the three-dimensional structure by performing a plasma doping process using a first source gas and a second source gas. The first source gas includes n-type or p-type impurity elements, and the second source gas includes a dilution element regardless of the electrical characteristic of a doped region.
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申请公布号 |
US7351622(B2) |
申请公布日期 |
2008.04.01 |
申请号 |
US20060490613 |
申请日期 |
2006.07.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BUH GYOUNG-HO;RYOO CHANG-WOO;SHIN YU-GYUN;PARK TAI-SU;LEE JIN-WOOK |
分类号 |
H01L21/84;H01L21/00;H01L21/336;H01L21/8234 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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