发明名称 |
Flash memory devices and methods for fabricating flash memory devices |
摘要 |
A flash memory device includes a cell string having a plurality of cell transistors connected in series, and a string selection transistor and a ground selection transistor connected to both ends of the cell string, respectively, wherein the cell transistor has a channel impurity concentration higher than a channel impurity concentration of at least one of the string selection transistor and the ground selection transistor.
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申请公布号 |
US7352035(B1) |
申请公布日期 |
2008.04.01 |
申请号 |
US20070700084 |
申请日期 |
2007.01.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SONG JAI-HYUK;CHOI JEONG-HYUK;HONG OK-CHEON |
分类号 |
H01L29/788;G11C16/02;H01L21/8239 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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