| 摘要 |
A semiconductor device is provided to securely fabricate a semiconductor device with a double-side substrate via hole by avoiding disconnection of a via line buried in a via hole at the surface of a semiconductor substrate. A semiconductor device is formed on a first surface of a semiconductor substrate. A blocking layer is formed in a first via hole(2) of a concave shape in the first surface of the semiconductor substrate. A first via line comes in contact with the blocking layer, connected to an electrode of the semiconductor device. A second via line is formed in a second via hole, electrically connected to the blocking layer and the first via line interposed between the semiconductor device and the second via line and constituting a part of an electric wire formed in a second surface of the semiconductor substrate. The second via hole includes the second via line of a concave shape that is formed in the second surface confronting the first surface to come in contact with the blocking layer. The blocking layer includes at least one kind of a VIII-group element. One of the first via lines can come in contact with one of the second via lines. The first and second via lines can be metal, metal alloy or resin including diffused conductive particles. |
