Method of manufacturing heterojunction bipolar transistor,申请号KR20020013496-传众专利搜索

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发明名称	Method of manufacturing heterojunction bipolar transistor
摘要
申请公布号	KR100818417(B1)	申请公布日期	2008.04.01
申请号	KR20020013496	申请日期	2002.03.13
申请人		发明人
分类号	H01L29/737	主分类号	H01L29/737
代理机构		代理人
主权项
地址

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