发明名称 |
Semiconductor memory device and method of arranging a decoupling capacitor thereof |
摘要 |
A semiconductor memory device with improved operational performance by reducing the level variation of first and second power voltages applied to a sense amplifier by efficiently locating a decoupling capacitor. The decoupling capacitor is arranged on an empty region of a plurality of the first and second sense amplifiers and connected between the first and second power voltage lines. A plurality of global data I/O line pairs is arranged perpendicular to the direction of a plurality of local data I/O line pairs.
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申请公布号 |
US7352646(B2) |
申请公布日期 |
2008.04.01 |
申请号 |
US20040024348 |
申请日期 |
2004.12.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI HYUNG-CHAN;KIM CHI-WOOK |
分类号 |
G11C8/00;G11C5/02;G11C5/14;G11C7/08 |
主分类号 |
G11C8/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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