发明名称 |
Noble high-k device |
摘要 |
At least one high-k device, and a method for forming the at least one high-k device, comprising the following. A structure having a strained substrate formed thereover. The strained substrate comprising at least an uppermost strained-Si epi layer. At least one dielectric gate oxide portion over the strained substrate. The at least one dielectric gate oxide portion having a dielectric constant of greater than about 4.0. A device over each of the at least one dielectric gate oxide portion to complete the least one high-k device. A method of forming the at least one high-k device.
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申请公布号 |
US7351994(B2) |
申请公布日期 |
2008.04.01 |
申请号 |
US20040762164 |
申请日期 |
2004.01.21 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
YAO LIANG-GI;CHANG TIEN-CHIH;WANG MING-FANG;CHEN SHIH-CHANG;LIANG MONG-SONG |
分类号 |
H01L29/06;H01L21/336;H01L21/8238;H01L29/10;H01L29/51 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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