FUSE BOX OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

摘要

A fuse box of a semiconductor device and a method for forming the same are provided to prevent generation of cracks due to exposure of a TiN layer in a blowing process by forming selectively a fuse including a TiN pattern only at a contact part of a contact plug. A lower structure is formed on a semiconductor substrate(31). A first interlayer dielectric(32) is formed on the semiconductor substrate to cover the lower structure. A fuse(35) is formed on the first interlayer dielectric. A second interlayer dielectric(36) is formed on the first interlayer dielectric including a fuse. A contact plug(37) comes in contact with the fuse within the second and first interlayer dielectrics. A metal line(38) comes in contact with the contact plug on the second interlayer dielectric. A stacked layer of a TiN layer and a polysilicon layer(34) is formed selectively at a contact region between the fuse and the contact plug.