METHOD OF FORMING GATE PATTERN OF SEMICONDUCTOR DEVICE

摘要

A method for forming a gate pattern in a semiconductor device is provided to recover a gate dielectric layer from etch damage produced when a gate structure is formed, through a plasma oxidization process. A gate dielectric layer(105) is formed on a semiconductor substrate(100), and then a gate layer is formed on the gate dielectric layer. The gate layer is patterned using photography and etch process to form a gate structure(121) on the gate dielectric. The substrate having the gate structure is subjected to plasma oxidation to recover the gate dielectric layer from etch damage. The substrate is subjected to thermal annealing(140) to recover a defect of the gate dielectric. The gate structure has at least one of a polysilicon layer, a metal layer and a metal silicide layer.