METHOD FOR FORMING A CAPACITOR IN SEMICONDUCTOR DEVICE

摘要

A method for forming a capacitor in a semiconductor device is provided to prevent a sharp point from being formed on a bottom electrode by fast etching a sacrificial oxide layer relative to a TiN layer. A substrate(110) with a sacrificial pattern layer(114) is prepared, and then a bottom electrode material is formed along a stepped surface formed by the sacrificial pattern layer. The substrate is subjected to an etch process(116) using an etch selectivity between the bottom electrode material and the sacrificial pattern layer to form a bottom electrode(115A). The etch process is performed in such a way that the sacrificial pattern layer is etched faster than the bottom electrode material. The bottom electrode material is a TiN layer, and the sacrificial pattern layer is an oxide layer.