Threshold switching operation method of nonvolitile memory device induced by pulse voltage,申请号KR20060058096-传众专利搜索

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发明名称	Threshold switching operation method of nonvolitile memory device induced by pulse voltage
摘要
申请公布号	KR100818271(B1)	申请公布日期	2008.03.31
申请号	KR20060058096	申请日期	2006.06.27
申请人		发明人
分类号	G11C16/04;G11C16/12	主分类号	G11C16/04
代理机构		代理人
主权项
地址

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