发明名称 GERMANIUM/SILICON AVALANCHE PHOTODETECTOR WITH SEPARATE ABSORPTION AND MULTIPLICATION REGIONS
摘要 A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region. ® KIPO & WIPO 2008
申请公布号 KR20080028385(A) 申请公布日期 2008.03.31
申请号 KR20077030930 申请日期 2006.06.28
申请人 INTEL CORP. 发明人 MORSE MICHAEL;DOSUNMU OLUFEMI;PANICCIA MARIO;LIU ANSHENG
分类号 H01L31/107 主分类号 H01L31/107
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