| 摘要 |
<p>An image sensor and a manufacturing method thereof are provided to thin a metal interconnection and insulating layer by forming the metal interconnection and the insulating layer with a copper plating layer. An interlayer dielectric(20) is formed on a substrate(10) with a photodiode(11), and then trenches are formed on the interlayer dielectric. A barrier metal layer and a copper seed layer are formed in the trenches, and then a copper plating layer(40) is formed on the copper seed layer. The copper plating layer is planarized by a CMP process to have a step height lower than the interlayer dielectric. A conductive barrier(50) is formed on the trenches, and then a color filter array(60) is formed on the interlayer dielectric and the metal interconnection(30). A microlens(70) is formed on the color filter array.</p> |
