| 摘要 |
<p>A method and an apparatus for angular-resolved spectroscopic lithography characterization are provided to identify false low overlay calculation. A method for measuring a characteristic of a substrate(W) includes a process for projecting radiation onto a substrate by using a radiation projector, and a process for detecting a 0th and an nth reflected radiation where n>1 and the reflected radiation expresses a characteristic to be measured. The radiation is projected onto a plurality of superimposed patterns. A detector detects an overlay error between a plurality of superimposed patterns. The overlay error is measured by using data from a first diffraction. Data from the 0th diffraction is used as an error check.</p> |
