发明名称 |
TRILAYER RESIST ORGANIC LAYER ETCH |
摘要 |
TRILAYER RESIST ORGANIC LAYER ETCH A method of forming dual damascene features in a porous low-k dielectric layer is provided. Vias are formed in the porous low-k dielectric layer. An organic planarization layer is formed over the porous low-k dielectric layer, wherein the organic layer fills the vias. A photoresist mask is formed over the organic planarization layer. Features are etched into the organic planarization layer comprising providing a CO2 ontaining etch gas and forming a plasma from the CO2 containing etch gas, which etches the organic planarization layer. Trenches are etched into the porous low-k dielectric layer using the organic planarization layer as a mask. The organic planarization layer is stripped. (Fig. 1)
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申请公布号 |
SG140537(A1) |
申请公布日期 |
2008.03.28 |
申请号 |
SG20070057706 |
申请日期 |
2007.08.07 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
KANG, SEAN S.;CHO, SANG JUN;CHOI, TOM;HAN, TAEJOON |
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