Forming a layer containing silicon and carbon on a substrate, comprises introducing a substrate in a reactor, introducing a carbon precursor, introducing a silicon precursor and reacting the precursors

摘要

Forming a layer containing silicon and carbon on a substrate, comprises introducing a substrate in a reactor, introducing a carbon precursor in the reactor, introducing a silicon precursor in the reactor and reacting the precursors at a temperature and pressure such as a layer of material containing silicon and carbon is deposited on the substrate. The carbon precursor comprises compounds containing at least two carbonaceous reactive groups and/or having an aromatic function. The layer obtained has an elemental composition having a carbon content higher than 40%.