发明名称 INTEGRATED CIRCUIT SYSTEM EMPLOYING GATE SHIELD AND/OR GROUND SHIELD
摘要 <p>INTEGRATED CIRCUIT SYSTEM EMPLOYING GATE SHIELD AND/OR GROUND SHIELD An integrated circuit system that includes: forming a substrate with an active region; depositing a material over the substrate to act as an etch stop and define a source and a drain; depositing a first dielectric over the substrate; processing the first dielectric to form features within the first dielectric including a shield; and depositing fill within the features to electrically connect the shield to the source of the active region by a single process step</p>
申请公布号 SG140555(A1) 申请公布日期 2008.03.28
申请号 SG20070060528 申请日期 2007.08.17
申请人 CHARTERED SEMICONDUCTOR MANUFACTURING LTD. 发明人 SEAH TEO LENG, XAVIER
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