发明名称 |
INTEGRATED CIRCUIT SYSTEM EMPLOYING GATE SHIELD AND/OR GROUND SHIELD |
摘要 |
<p>INTEGRATED CIRCUIT SYSTEM EMPLOYING GATE SHIELD AND/OR GROUND SHIELD An integrated circuit system that includes: forming a substrate with an active region; depositing a material over the substrate to act as an etch stop and define a source and a drain; depositing a first dielectric over the substrate; processing the first dielectric to form features within the first dielectric including a shield; and depositing fill within the features to electrically connect the shield to the source of the active region by a single process step</p> |
申请公布号 |
SG140555(A1) |
申请公布日期 |
2008.03.28 |
申请号 |
SG20070060528 |
申请日期 |
2007.08.17 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
SEAH TEO LENG, XAVIER |
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